商用無料の写真検索さん
           


Image from page 445 of "The Bell System technical journal" (1922) : 無料・フリー素材/写真

Image from page 445 of "The Bell System technical journal" (1922) / Internet Archive Book Images
このタグをブログ記事に貼り付けてください。
トリミング(切り除き):
使用画像:     注:元画像によっては、全ての大きさが同じ場合があります。
サイズ:横      位置:上から 左から 写真をドラッグしても調整できます。
あなたのブログで、ぜひこのサービスを紹介してください!(^^
Image from page 445 of "The Bell System technical journal" (1922)

QRコード

ライセンスNo known copyright restrictions(著作権制限なし)
説明Identifier: bellsystemtechni28amerrichTitle: The Bell System technical journalYear: 1922 (1920s)Authors: American Telephone and Telegraph CompanySubjects: Telecommunication Electric engineering Communication Electronics Science TechnologyPublisher: [Short Hills, N.J., etc., American Telephone and Telegraph Co.]Contributing Library: Prelinger LibraryDigitizing Sponsor: Internet ArchiveView Book Page: Book ViewerAbout This Book: Catalog EntryView All Images: All Images From BookClick here to view book online to see this illustration in context in a browseable online version of this book.Text Appearing Before Image:iting(29) and (30) in terms of integrals takeii from some arl)ilrary but fixedlower limit: ^ dv , f^^dv !(..)= -/*^ + /.(..)= -/1 + / As V(, is varied both the integrals with upper limit vi, will vary, and eithercan be expressed as a function of the other: rf=/(/-3 whence which is identical with (28). 414 BELL SYSTEM TECHNICAL JOURNAL The equations (29) and (30) of course apply only to the portion of thecurve of v against ^ which is derived from starting points vo on the v axiswhich are less than the maximum value vi corresponding to the value m.igiven by (12): The points for pq < vi are merely initiated at time 5 = 0 andpropagated by the differential equation from then on; the point v ^ vi,^ = 0, on the other hand, remains a source at all times from the initiationof the injection onward. Thus the complete curve of v against ^ for anypositive 5 follows the dotted construction of Fig. 4 from the ^ axis up towhere it intersects the full curve corresponding to j/q = n , after which itText Appearing After Image:4ccx Fig. 4—Schematic illustration of the method of constructing the curve of hole densityfih against distance x from the injection electrode at some given time, taking account ofrecombination but neglecting diffusion. follows the latter curve, as indicated by the crosses m the figure. The steady-state distribution is thus simply the full curve for vo = fi • For explicit calculation for the case of pure volume recombination onemust insert = 1/[1 + (1 + Hh/t^e)v\\ R = v{\ ^ v) into (29) and (30).The integrations are easily carried out and give 1 + (4 + Hh/(Je)vo ^ = + In 1 + (1 + yih/iJ-^n + ^, In[same with v instead of Iol 1 + (1 + Hh/lJ-e)V0 1 + J^o = In 1 +V0 - In 1 +P (31a)(32a) EXCESS SEMICONDUCTOR llOIJ. TRANSPORT 415 For the case of a surface recombination unintluenced by electron concen-tration one obtains similarly, with R — v. — [same with v instead of V(\ (31b) 5 = in - (32b) V When ^Xe = 3^/, 2, as for germanium, (31a) and (31b) become respectively 5/2 v^Note About ImagesPlease note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.
撮影日1922-01-01 00:00:00
撮影者Internet Archive Book Images
タグ
撮影地


© 名入れギフト.com

こちらもおすすめです→ カエレバ(同一商品の複数ショップリンク一発作成) | Amazon search | 楽々お任せリンク | Affiliate Helper